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Van Der Waals Epitaxy of GaSe on WSe2

Published online by Cambridge University Press:  25 February 2011

O. Lang ,
R. Schlaf ,
Y. Tomm ,
C. Pettenkofer  and
W. Jaegermann
O. Lang
Affiliation:
Hahn-Meitner-Institut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
R. Schlaf
Affiliation:
Hahn-Meitner-Institut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
Y. Tomm
Affiliation:
Hahn-Meitner-Institut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
C. Pettenkofer
Affiliation:
Hahn-Meitner-Institut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
W. Jaegermann
Affiliation:
Hahn-Meitner-Institut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
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Abstract

GaSe layers were grown on the van der Waals (0001) planes of WSe2 (van der Waals epitaxy). The substrate (0001) plane was cleaned in UHV by heating to 400°C. GaSe was deposited from resistively heated Knudsen cells at T=300° C. After annealing at 450°C an epitaxial GaSe overlayer is formed as evidenced by X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction and photoelectron spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 291
Copyright
Copyright © Materials Research Society 1992

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References

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