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Vacancy Related Defects in Thin Film Pb(ZrTi)O3 Materials

  • A. Krishnan (a1), D.J. Keeble (a1), R. Ramesh (a2), W.L. Warren (a3), B.A. Tuttle (a3), R.L. Pfeffer (a4), B. Nielsen (a5) and K.G. Lynn (a5)...

Abstract

Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.

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Vacancy Related Defects in Thin Film Pb(ZrTi)O3 Materials

  • A. Krishnan (a1), D.J. Keeble (a1), R. Ramesh (a2), W.L. Warren (a3), B.A. Tuttle (a3), R.L. Pfeffer (a4), B. Nielsen (a5) and K.G. Lynn (a5)...

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