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Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

  • M. Ghisoni (a1), A. W. Rivers (a1), K. Lee (a1), G. Parry (a1), X. Zhang (a2), A. Staton-Bevan (a2), M. Pate (a3), G. Hill (a3), C. Button (a3) and J. S. Roberts (a3)...

Abstract

In this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

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Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

  • M. Ghisoni (a1), A. W. Rivers (a1), K. Lee (a1), G. Parry (a1), X. Zhang (a2), A. Staton-Bevan (a2), M. Pate (a3), G. Hill (a3), C. Button (a3) and J. S. Roberts (a3)...

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