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UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Mee-Yi Ryu ,
C. Q. Chen ,
E. Kuokstis ,
J. W. Yang ,
G. Simin ,
M. Asif Khan ,
G. G. Sim  and
P. W. Yu
Mee-Yi Ryu
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
C. Q. Chen
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
E. Kuokstis
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
J. W. Yang
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
G. Simin
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
M. Asif Khan
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
G. G. Sim
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju, 500-712, Republic of Korea
P. W. Yu
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju, 500-712, Republic of Korea
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Abstract

We present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K1.7
Copyright
Copyright © Materials Research Society 2002

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