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Use of μ-Si:H Wide Band Gap N- and P-Type Materials for Producing Solar Cells by a TCDDC System

Published online by Cambridge University Press:  26 February 2011

J. L. Guimarães ,
R. Martins ,
E. Fortunato ,
I. Ferreira ,
M. Santos  and
N. Carvalho
J. L. Guimarães
Affiliation:
Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa / UNINOVA / Centro de Fisica Molecular das Universidades de Lisboa (INIC),PORTUGAL.
R. Martins
Affiliation:
Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa / UNINOVA / Centro de Fisica Molecular das Universidades de Lisboa (INIC),PORTUGAL.
E. Fortunato
Affiliation:
Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa / UNINOVA / Centro de Fisica Molecular das Universidades de Lisboa (INIC),PORTUGAL.
I. Ferreira
Affiliation:
Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa / UNINOVA / Centro de Fisica Molecular das Universidades de Lisboa (INIC),PORTUGAL.
M. Santos
Affiliation:
Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa / UNINOVA / Centro de Fisica Molecular das Universidades de Lisboa (INIC),PORTUGAL.
N. Carvalho
Affiliation:
Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa / UNINOVA / Centro de Fisica Molecular das Universidades de Lisboa (INIC),PORTUGAL.
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Abstract

Amorphous silicon (a-Si:H) solar cells based on p.i. n junctions have been produced by a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system [1], either using Wide Band Gap-μc (WBG-μc) films or normal doped ones, as contact layers. The role of such doped layers on device's performance (open circuit voltage, Voc, short circuit current density, Jsc, fill factor, FF, and conversion efficiency, η) have been determined by spectral response and I-V curve measurements. The obtained data show that Voc is enhanced over more than 25% by using WBG-μc films with thicknesses bellow 300 Å as doped contacts, when compared with normal p.i.n junctions [2]. Besides this, if a smooth grade interlayer, based on a-Si:C doped alloys, is added between junctions [3], Voc higher than 1.0 V with η ≥7.5% are obtained in single structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 617
Copyright
Copyright © Materials Research Society 1988

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References

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