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The Use of Langmuir Probe Measurements to Study Reaction Kinetics in Remote Plasma-Enhanced Chemical Vapor Deposition of Silicon

  • B. Anthony (a1), T. Hsu (a1), L. Breaux (a1), R. Qian (a1), S. Banerjee (a1) and A. Tasch (a1)...

Abstract

The reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) have been studied using Langmuir probe measurements of plasma density and plasma potential combined with growth rate data as a function of r-f power, chamber pressure, and substrate bias. An observed increase in growth rate for negative substrate bias suggests that argon ions drive the reaction. The variation of ion density, and plasma potential with r-f power suggests that the flux of argon ions, not their kinetic energy is responsible for increased growth rates at higher r-f powers.

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