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Use of a Monte-Carlo Code to Determine in High Z Semi-Conductor CdTe and CZT, Both Carriers Lifetimes and Mobilities

Published online by Cambridge University Press:  10 February 2011

E. Muller ,
M. Jung ,
P. Fougfères ,
M. Hage-Ali  and
P. Siffert
E. Muller
Affiliation:
CNRS LABORATOIRE PHASE (UPR 292) BP 20, 67037 STRASBOURG CEDEX 2, FRANCE
M. Jung
Affiliation:
CNRS LABORATOIRE PHASE (UPR 292) BP 20, 67037 STRASBOURG CEDEX 2, FRANCE
P. Fougfères
Affiliation:
CNRS LABORATOIRE PHASE (UPR 292) BP 20, 67037 STRASBOURG CEDEX 2, FRANCE
M. Hage-Ali
Affiliation:
CNRS LABORATOIRE PHASE (UPR 292) BP 20, 67037 STRASBOURG CEDEX 2, FRANCE
P. Siffert
Affiliation:
CNRS LABORATOIRE PHASE (UPR 292) BP 20, 67037 STRASBOURG CEDEX 2, FRANCE
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Abstract

This paper deals with a comparison between experimental gamma-ray spectra recorded with CdTe and CdZnTe detectors and a Monte Carlo code simulating the spectrum, in order to extract realistic values of the transport properties of both electrons and holes in these materials. In a second section, these values are compared to that obtained by others using other methods, in order to evaluate the accuracy of the various experimental procedures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 301
Copyright
Copyright © Materials Research Society 1998

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