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Uniformity Control in Elemental Vapor Transport Epitaxy

  • A. I. Gurary (a1), G. S. Tompa (a1), R. A. Stall (a1), S. Liang (a1), Y. Lu (a2) and H. C. KUO (a2)...

Abstract

Elemental Vapor Transport Epitaxy (EVTE) is a novel technique for semiconductor manufacturing, which combines the advantages of Molecular Beam Epitaxy (MBE) and Vapor Phase Epitaxy (VPE). EVTE provides a high level of elemental flux control, scaling to large deposition areas, and elimination of elemental Ga source related oval defects. EVTE has been successfully applied to the deposition of III-V and II-VI thin films and heterostructures. Design considerations and evaluations of the novel EVTE elements: elemental flux regulating valve operating at temperatures >1250°C with demonstrated response times less than 1 second and elemental flux distribution manifold are presented. The calculated operational parameters for EVTE are in good agreement with the observed experimental results.

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Uniformity Control in Elemental Vapor Transport Epitaxy

  • A. I. Gurary (a1), G. S. Tompa (a1), R. A. Stall (a1), S. Liang (a1), Y. Lu (a2) and H. C. KUO (a2)...

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