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Uniform Tetragonal WSi2 Layers Formed by RTA

  • M. Siegal (a1) (a2), J. J. Santiago (a1) (a3), J. Van Der Spiegel (a1) (a3), W. R. Graham (a1) (a2) and M. Setton (a1) (a2)...

Abstract

Thin films of tungsten silicide with resistivities of 30 – 35 μΩ-cm have been formed by sputter depositing 71 nm of W metal onto (100) oriented, 5 Ω-cm, p-type silicon wafers that were etched in BOE 500 solution. The samples were fast radiatively processed in an RTA system under high vacuum for time anneals ranging from 15 – 50 seconds at a temperature of ∼ 1100°C. The inevitable oxide barrier at the interface is shown to decrease with increasing RTA time.

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