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Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications

  • Hyungshin Kwon (a1) and Hyunsang Hwang (a1)

Abstract

The electrical and reliability characteristics of ultra-thin gate oxide, annealed in ND3 gas, have been investigated. Compared with a control oxide, which had been annealed in NH3, the ND3-nitrided oxide exhibits a significant reduction in charge trapping and interface state generation. The improvement of electrical and reliability characteristics can be explained by the strong Si-D bond at the Si/SiO2 interface. This nitridation process of gate dielectric using ND3 has considerable potential for future ultra large scaled integration (ULSI) device applications.

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Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications

  • Hyungshin Kwon (a1) and Hyunsang Hwang (a1)

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