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Ultrashort Pulse Generation with Semiconductor Modelocked Lasers Using Saturable Absorbers Based on Intersubband Transitions in GaN/AlGaN Quantum Wells
Published online by Cambridge University Press: 26 February 2011
Abstract
We present a novel scheme for generating high energy ultrashort pulses in modelocked semiconductor lasers using a fast saturable absorber based upon intersubband transitions (ISBT) in GaN/AlGaN superlattice. The fast electron relaxation time (∼100–300 fs) in this saturable absorber enables the generation of stable sub-100 fs pulses at the communication wavelength (1.55μm) with high pulse energies (5–10 pJ).
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- Copyright © Materials Research Society 2005