Skip to main content Accessibility help
×
Home

Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing

  • Toshio Kudo (a1), Susumu Sakuragi (a1) and Kazunori Yamazaki (a1)

Abstract

In order to investigate the possibility of nanosecond activation in the non-melting state, we adopted the method of double-pulsed green laser annealing (DPSS), controlling effectively the combined pulse width with two pulsed lasers (pulse duration: ˜100ns, frequency: 1kHz). We investigated the formation of ultra-shallow junctions (USJ) less than 10nm in spite of the deep penetration depth of the green wavelength in crystalline Si (˜1000nm). In order to limit the depth of B implant, a Ge pre-amorphization implant was performed at an energy of 3keV to a dose of 3E+14/cm2. After the pre-amorphization implant, a B implant was performed at 0.2kev and doses of 5E+14/cm2 and 1E+15/cm2. The implanted B dopants remain within the pre-amorphized Si layer. The double-pulsed laser irradiation was performed with a homogenized line beam of 0.1mm x 17mm, scanning a sample stage at a constant velocity of 10mm/s, that is, at an overlap ratio of 90%. The non-melting state was found to be in the pulse energy density range of E ≤ 780mJ/cm2 at a delay time of 300ns. Overcoming the issues of the short annealing time (˜<1μs) and the deep penetration depth (˜1000nm), we succeeded in the ultra-shallow junction formation beyond the 45nm CMOS node: maximum junction depth of 6nm, minimum sheet resistance of 0.65kohm/sq at a B dose of 1E+15/cm2, an abruptness of 1.4nm/dec.

Copyright

References

Hide All
1 Lindsay, R. et al, IEEE, p.70, March 2004
2 Ito, T. et al, 2003 Symposium on VLSI Technology Digest, p. 53, June 2003.
3 Feng, L. M., Wang, Y., and Talwar, S., Semiconductor Manufacturing, p44, December 2004.
4 Talwar, S., Felch, S. B., Downey, D. F., Wang, Y., 2000 International Conference on Ion Implantation Technology Proceedings, IEEE, p.175 (2000).
5 Yamazaki, K. et al, AM-LCD2002 Digest, p.149 (2002).
6 Talwar, S., Markle, D. and Thompson, M., Solid State Technology, p83, July 2003.

Ultra-Shallow Junction Formation by a Non-Melting Process; Double-Pulsed Green Laser Annealing

  • Toshio Kudo (a1), Susumu Sakuragi (a1) and Kazunori Yamazaki (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed