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Ultra-low Voltage, Self-aligned OTFTs for Frequency Applications
Published online by Cambridge University Press: 21 May 2013
Abstract
A novel structure for Organic Thin-Film Transistor (OTFT) is here presented. The devices are fabricated using a one-mask, photolithographic self-alignment technique which can be performed with standard photoresists and without further chemical treatments. This technique, combined with a novel technology for the realization of low voltage OTFTs, allows a dramatic reduction of the parasitic capacitances thus leading to a remarkable cut-off frequency. In this paper, the main electrical parameters of low voltage, self-aligned devices are reported, and a complete frequency characterization of the devices is given. These characteristics make the reported approach suitable for the development of basic circuitries for frequency applications.
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- MRS Online Proceedings Library (OPL) , Volume 1567: Symposium JJ – Fundamental Processes in Organic Electronics , 2013 , mrss13-1567-jj13-34
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- Copyright © Materials Research Society 2013