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Ultra-High Speed Solidification and Crystal Growth in Transiently Molten Semiconductor Layers

Published online by Cambridge University Press:  15 February 2011

A.G. Cullis
A.G. Cullis*
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs. WR14 3PS, England
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Abstract

The use of Q-switched laser melting techniques to investigate new rapid solidification phenomena is described. It has been found that Si, Ge, GaP and GaAs can give rise to orientation dependent, kinetically-controlled defect generation processes during fast recrystallization from the melt. Indeed, these materials yield amorphous phases at sufficiently high solidification rates. Ultra-fast pulsed melting permits the study of the basic thermodynamic properties of amorphous solids. It is shown that amorphous Si melts to give a normal, low viscosity, undercooled liquid and that novel explosive crystal growth processes can occur in this low temperature regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 75
Copyright
Copyright © Materials Research Society 1983

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References

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