Article contents
Ultra-Fast Melting and Solidification Behaviour of Amorphous and Crystalline Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
Subnanosecond ultra-violet radiation pulses are used to produce relatively thick, large area amorphous layers onSi crystals by transient melting and solidification. The different behaviours of (001) and (111) Si orientations are highlighted. Observations of crystal growth phenomena during solidification at velocities lower than required for amorphization are correlated with theoretical predictions. Computer modelling of heat flow in amorphous silicon is refined.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1984
References
REFERENCES
- 2
- Cited by