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Ultra Shallow Junction Formation by RTA at High Temperature for Short Heating Cycle Time

Published online by Cambridge University Press:  10 February 2011

S. Saito ,
S. Shishiguchi ,
A. Mineji  and
T. Matsuda
S. Saito
Affiliation:
ULSI Device Development Labs., NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan, s-saito@lsi.nec.co.jp
S. Shishiguchi
Affiliation:
ULSI Device Development Labs., NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan, s-saito@lsi.nec.co.jp
A. Mineji
Affiliation:
ULSI Device Development Labs., NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan, s-saito@lsi.nec.co.jp
T. Matsuda
Affiliation:
ULSI Device Development Labs., NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan, s-saito@lsi.nec.co.jp
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Abstract

In accordance with decrease of device size, ultra shallow junctions are required for realizing superior device performance. Enhanced diffusion caused by implantation is a crucial factor to realize ultra shallow junctions. Not only implant but also RTA conditions are key factors to suppress enhanced diffusion. In this paper, process conditions to minimize enhanced diffusion are discussed. Implant ion species, energy, dose and beam current parameters are investigated for implantation and temperature, time and ramping rate parameters are investigated for RTA. Important result is that optimization of not only implant but also RTA conditions should be carried out in order to fabricate ultra shallow junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 3
Copyright
Copyright © Materials Research Society 1998

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References

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