Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-19T23:14:02.947Z Has data issue: false hasContentIssue false
  • English
  • Français

TXRF Characterization of Trace Metal Contamination in Thin Gate Oxides

Published online by Cambridge University Press:  25 February 2011

R. S. Hockett  and
Diane Hymes
R. S. Hockett
Affiliation:
Charles Evans & Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Diane Hymes
Affiliation:
MEMC Electronic Materials Company, 430 Indio Way, Sunnyvale, CA 94086
Get access

Abstract

Metal contamination on the surface of silicon substrates before gate oxidation is known to affect gate oxide reliability. For the first time this study presents a non-destructive, analytical measurement of transition metals in an 8nm gate oxide grown by a 920 °C-10min-dry oxidation of an intentionally contaminated silicon surface. The TECHNOS TREX 610 TXRF anglescan of the gate oxide provides qualitative information on the location of the metals. The data indicate the Fe is on or in the oxide, the Cu is below the oxide, the Zn is on the oxide, and the Ni may be both in the oxide and below the oxide layer. In addition, quantitative estimates from the TXRF data indicate that all the original Fe and Cu are present, while only portions of Zn and Ni are detected after the oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 173
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Hourai, M., Naritomi, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N. and Shiraiwa, T., Jap. J. Appl. Phys. 27, L2361–L2363 (1988).Google Scholar
[2] Eichinger, P., Rath, H. J., and Schwenke, H., Semiconductor Fabrication: Technology and Metrology. ASTM STP 990, Gupta, Dinesh, editor, American Society for Testing and Materials, 1989, p. 305.Google Scholar
[3] Hockett, R. S., Proceedings of Advanced Semiconductor Processing: Ultra Clean Processing Environments, SEMICON/East 1989, Boston, p. 115.Google Scholar
[4] Berneike, W., Knoth, J., Schwenke, H., and Weisbrod, U., Fresenius Z. Anal. Chem. 333, 524 (1989).Google Scholar
[5] Hockett, R. S., Diagnostic Techniques for Semiconductor Materials and Devices, edited by Benton, J. L., Maracas, C. N., and Rai-Choudhury, P., ECS Proceedings Vol. 92–2, (The Electrochemical Society, Inc.) 1992, p. 132.Google Scholar
[6] Nishihagi, K., Kawabata, A., Taniguchi, T., and Ikeda, S., Semiconductor Cleaning Technology/1989, edited by Ruzyllo, J. and Novak, R. E., ECS Proceedings Vol. 90–9, (The Electrochemical Society, Inc.) 1990, p. 243.Google Scholar
[7] Shiraiwa, T., Fujino, N., Sumita, S. and Tanizoe, Y., Semiconductor Fabrication: Technology and Metrology. ASTM STP 990, Gupta, D. C., editor, American Society for Testing and Materials, 1989, p. 314.Google Scholar