Metal contamination on the surface of silicon substrates before gate oxidation is known to affect gate oxide reliability. For the first time this study presents a non-destructive, analytical measurement of transition metals in an 8nm gate oxide grown by a 920 °C-10min-dry oxidation of an intentionally contaminated silicon surface. The TECHNOS TREX 610 TXRF anglescan of the gate oxide provides qualitative information on the location of the metals. The data indicate the Fe is on or in the oxide, the Cu is below the oxide, the Zn is on the oxide, and the Ni may be both in the oxide and below the oxide layer. In addition, quantitative estimates from the TXRF data indicate that all the original Fe and Cu are present, while only portions of Zn and Ni are detected after the oxidation.