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A Two-Step Process for the Formation of Au-Ge Ohmic Contacts to n-GaAs

Published online by Cambridge University Press:  25 February 2011

M. A. Dornath-Mohr ,
M. W. Cole ,
H. S. Lee ,
C. S. Wrenn ,
D. W. Eckart ,
D. C. Fox ,
L. Yerke ,
W. H. Chang ,
R. T. Lareau  and
K. A. Jones
...Show all authors
M. A. Dornath-Mohr
Affiliation:
Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703.
M. W. Cole
Affiliation:
Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703.
H. S. Lee
Affiliation:
GEO-CENTERS, INC., NJ Operations, Lake Hopatcong, NJ 07849. Work performed at U.S. Army ETDL, Fort Monmouth, NJ 07703.
C. S. Wrenn
Affiliation:
Vitronics, Inc., 15 Meridian Road, Eatontown, NJ 07724. Work performed at U.S. Army ETOL, Fort Monmouth, NJ 07703.
D. W. Eckart
Affiliation:
Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703.
D. C. Fox
Affiliation:
Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703.
L. Yerke
Affiliation:
Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703.
R. T. Lareau
Affiliation:
Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703.
K. A. Jones
Affiliation:
Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703.
F. Cosandy
Affiliation:
Department of Mechanics and Materials Science, Rutgers, The State University of New Jersey, Piscatauay, NJ 08855.
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Abstract

The formation of low temperature Au-Ge contacts to n-GaAs is a two-step process. In the first step, the metals segregate into Au and Ge rich regions and the intermixing of the Au and Ge with the Ga and As causes a reduction in the barrier height. The second step occurs after extended annealing, during which time Au and Ge continue to diffuse into the substrate. An orthorhombic Au-Ga phase is formed and it is likely that other Au-Ga or Ge-As phases are formed. The length of the extended anneal is dependent upon the atomic percent of Ge in the film, with the 10 at. % Ge taking 6 hr., the 27 at. % Ge taking 3 hr. and the 50 at. % Ge taking 9 hr. to become ohmic. The 75 at. % Ge sample doesn’t show ohmic behavior even after 33 hr. of annealing. The metal-semiconductor interface configuration appears abrupt, showing no protrusions into the GaAs substrate.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 369
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Werthen, J. G. and Scifres, D. R., J. Appl. Phys. 52, 1127 (1981).CrossRefGoogle Scholar
2. Aina, O., Katz, W., and Baliga, B. J., J. Appl. Phys. 53, 777 (1982).CrossRefGoogle Scholar
3. Iliadis, A., J. Vac. Sci. & Technol. B5, 1340 (1987)CrossRefGoogle Scholar
4. Robinson, G. Y., Solid-State Electron. 18, 331 (1975).CrossRefGoogle Scholar
5. Devlin, W. J., Stall, R. A., Wood, C. E. C., and Eastman, L. F., Solid-State Electron. 23, 823 (1980).CrossRefGoogle Scholar
6. Dornath-Mohr, M. A., Cole, M.W., Lee, H.S., Fox, D.C., Eckart, D.W., Yerke, , wrenn, C.S., Lareau, R.T., Chang, W.H., Jones, K.A., Cosandey, F., to be published in J. Electon. Mater., Special Edition.Google Scholar
7. Cole, M. W., et al, to be published.Google Scholar
8. Sinha, A. K. and Poate, J. M., Appl. Phys. Lett. 23, 666 (1973).CrossRefGoogle Scholar
9. Gyulai, J., Mayer, J. W., Rodriguez, V., Yu, A. Y. C., and Gopen, H. J., Appl. Phys. 42, 3578 (1971).CrossRefGoogle Scholar
10. Jaros, M. and Hartnagel, H. L., Solid-State Electron. 18, 1029 (1975).CrossRefGoogle Scholar