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Two-Band Tunneling Currents and Stress-Induced Leakage in Ultra-Thin SiO2 Films

  • S. Okhonin (a1), A. Ils (a1), D. Bouvet (a1), P. Fazan (a1), G. Guegan (a2), S. Deleonibus (a2) and F. Martin (a2)...

Abstract

The conduction band and valence band electron tunneling currents in ultra-thin SiO2 films at the transition from direct to Fowler-Nordheim tunneling regimes are studied. The slopes of the current voltage characteristics agree well with the simulations performed. The Stress-Induced Leakage Current (SILC) behavior is quite similar for both conduction and valence band currents even if the amplitude of the valence band SILC is much lower. We show that a linear dependence exists between the stress-induced interface trap density and both valence and conduction band SILC. A new model of SILC is also proposed.

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Two-Band Tunneling Currents and Stress-Induced Leakage in Ultra-Thin SiO2 Films

  • S. Okhonin (a1), A. Ils (a1), D. Bouvet (a1), P. Fazan (a1), G. Guegan (a2), S. Deleonibus (a2) and F. Martin (a2)...

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