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Tunneling Spectroscopy of Amorphous Semiconductors

Published online by Cambridge University Press:  21 February 2011

J. Wen  and
J. Kakalios
J. Wen
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

The tunneling transmission coefficient as calculated by the WKB and the multi-potential approximation (MPA) is compared for tunneling through an a-Si:H/a-SiNx:H double barrier structures. The MPA method leads to shifts in the location of the quantum well states, which complicates the interpretation of quantum size effects in amorphous silicon multilayers. Experimental studies of tunneling currents through a-Si:H/a-SiNx:H single barrier structures are presented. At low temperatures the conductance data resembles tunneling data for metal/insulator/metal structures with an asymmetric barrier, while at room temperature a pronounced peak is observed in the conductance-volatge characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 819
Copyright
Copyright © Materials Research Society 1992

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References

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