Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-24T22:04:23.819Z Has data issue: false hasContentIssue false
  • English
  • Français

Tunneling Current in Thin Silicon Dioxide Films

Published online by Cambridge University Press:  22 February 2011

Sufi Zafar ,
J. C. Poler ,
E. A. Irene ,
X. Xu ,
G. Haines ,
R. Kuehn  and
J. J. Wortman
Sufi Zafar
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599
J. C. Poler
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599
E. A. Irene
Affiliation:
Dept. of Chemistry, University of North Carolina, Chapel Hill, NC 27599
X. Xu
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
G. Haines
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
R. Kuehn
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
J. J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, N. Carolina State University, Raleigh, NC, 27695
Get access

Abstract

Tunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 325
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Petersson, G. P., Svensson, C. M. and Maserjian, J., Solid-State Electron. 18, 996 (1974).Google Scholar
2. Maserjian, J., The Physics and Chemistry of Si0 2 and Si-SiO2 Interface, edited by Helms, C. R. and Deal, B. E., (Plennum Press, NY) 1988, p. 505.Google Scholar
3. Poler, J. C., McKay, K. K. and Irene, E. A., J. Vac. Sci. Tech. B 12, 88 (1994).CrossRefGoogle Scholar
4. Alferieff, M. E. and Duke, C. B., J. Chem. Phys. 46, 938 (1967).CrossRefGoogle Scholar
5 Kuehn, R., Ph.D. Thesis, North Carolina State University, 1993.Google Scholar
6. Fowler, R. H. and Nordheim, L. W., Proc. Roy. Soc., Lond. Ser. A119, 173 (1928).Google Scholar
7. Maserjian, J., Petersson, G. and Svensson, C., Solid-State Electron. 17, 335 (1974).CrossRefGoogle Scholar
8. Lewicki, G. and Maserjian, J., J. Appl. Phys. 46, 3032 (1975).CrossRefGoogle Scholar
9. Sune, J., Placencia, I., Farres, E., Barniol, N., and Aymerich, X., Phys. Stat. Sol. 109, 496 (1988).Google Scholar