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Tuning the Magnetic Domain Structure of Spin-polarized Complex Oxide Nanostructures

Published online by Cambridge University Press:  01 February 2011

Joanna Strongson Bettinger
Affiliation:
joannab@slac.stanford.edu, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, California, United States
Rajesh V. Chopdekar
Affiliation:
rajesh.chopdekar@gmail.com, UC Berkeley, Materials Science and Engineering, Berkeley, California, United States
Brooke Mesler
Affiliation:
blmesler@lbl.gov, Lawrence Berkeley National Laboratory, Center for X-ray Optics, Berkeley, California, United States
Douglas Chain
Affiliation:
dougchain@berkeley.edu, UC Berkeley, Materials Science and Engineering, Berkeley, California, United States
Andrew Doran
Affiliation:
adoran@lbl.gov, Lawrence Berkeley National Laboratory, Advanced Light Source, Berkeley, California, United States
Erik Anderson
Affiliation:
EHAnderson@lbl.gov, Lawrence Berkeley National Laboratory, Center for X-ray Optics, Berkeley, California, United States
Andreas Scholl
Affiliation:
a_scholl@lbl.gov, Lawrence Berkeley National Laboratory, Advanced Light Source, Berkeley, California, United States
Yuri Suzuki
Affiliation:
ysuzuki@berkeley.edu, Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, California, United States
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Abstract

To successfully incorporate the highly spin-polarized material La0.7Sr0.3MnO3 (LSMO) into spin-based electronic devices it is essential to be able to control and tune the magnetic domain structure. In this work, we geometrically confine epitaxial thin films of LSMO into hexagons to examine the effect of magnetostatic and magnetic anisotropy energies on the domain formation. We find through careful choice of hexagon aspect ratio, crystalline direction, and substrate orientation, we can tune the magnetic domain formation to be single, two, six (flux closure), or other domain configurations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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