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Tungsten Film Formation on Silicon by Combining Ionic Decomposition of Metal Halides with Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

Peer Tidemand-Petersson  and
Gunnar SØRensen
Peer Tidemand-Petersson
Affiliation:
Institute of Physics, University of AarhusDK-8000 Aarhus C, Denmark
Gunnar SØRensen
Affiliation:
Institute of Physics, University of AarhusDK-8000 Aarhus C, Denmark
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Abstract

Thin films of tungsten metal and tungsten silicide were formed by combination of spin-on of tungsten chloride dissolved in a volatile organic solvent, decomposition of the chloride by ion bombardment and finally heating in a new versatile Rapid Thermal Processing (RTP) system. The films resulting from this treatment were characterized by Rutherford Backscattering Spectrometry (RBS) prior to and after the ionic decomposition and heat treatment. The procedure and the results of the analysis are described and discussed in terms of process conditions in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 229
Copyright
Copyright © Materials Research Society 1989

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References

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