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A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts

Published online by Cambridge University Press:  25 February 2011

C-P. Chen ,
C-H. Jan ,
Y. A. Chang  and
T. Kuech
C-P. Chen
Affiliation:
Univ. of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Ave., Madison, WI. 53706
C-H. Jan
Affiliation:
Univ. of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Ave., Madison, WI. 53706
Y. A. Chang
Affiliation:
Univ. of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Ave., Madison, WI. 53706
T. Kuech
Affiliation:
Chemical Engineering Department, 1415 Johnson Dr., Madison, WI. 53706
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Abstract

The Schottky barrier heights of Ni(GaxAl1−x)/n-GaAs contacts have been measured by the I-V and C-V techniques. Contacts with x = 0.0, 0.25, 0.5, 0.75, and 1.0 have been prepared, and a wide range of Schottky barrier heights, 0.66 to 0.96 eV, can be achieved by varying the composition of the alloy contacts. After annealing at 400 °C, the barrier heights increase continuously from 0.66 to 0.96 eV as x decreases. The interfacial stability between the Ni(Ga,Al) contacts and GaAs has been examined by SAM. The modulation of the Schottky barrier height and the interface stability are explained by a thermodynamic and kinetic analysis of the GaAs-NiGa-NiAl-AlAs system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 683
Copyright
Copyright © Materials Research Society 1993

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References

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