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Tunability of Bi-rich BZN Cubic Pyrochlore Thin Films by Reactive Sputtering

Published online by Cambridge University Press:  01 February 2011

Dong Hyuk Back
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon 442–749, Korea
Yoon Seop Lee
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon 442–749, Korea
Young Pyo Hong
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon 442–749, Korea
Joong Ho Moon
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon 442–749, Korea
Kyung Hyun Ko*
Affiliation:
Department of Materials Science and Engineering, Ajou University, Suwon 442–749, Korea
*
* (Fax: +82–31–219–2534, E-mail: khko@madang.ajou.ac.kr)
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Abstract

(Bi3xZn2−3x)(ZnxNb2−x)O7 thin films (x=1/2 and 2/3) have potential great for tunable RF and microwave devices due to medium dielectric constant and low dielectric loss. The tunable dielectric properties of Bi-rich, (Bi1.5 Zn0.5)(Zn0.5 Nb1.5)O7 thin films were investigated. To make Bi-rich cubic pyrochlore thin films, Bi2O3–ZnO–Nb2O5 monoclinic pyrochlore ceramic targets were used in reactive RF magnetron sputtering process. Substrate heating was employed to improve surface morphology and tunability. As-deposited films were crystallized or amorphous state depending on substrate temperature. All films were annealed at 600°C ∼ 800°C for 3 hours in the air. There were no zinc niobate secondary phases in the films before and after post-annealing, while quite significant amount BZN thin films were found in sputtered using cubic pyrochlore ceramic targets, especially after post-annealing. It was found that Bi-rich BZN films have much larger tunability when as-deposited phase are amorphous. The maximum tunability 38% was obtained when substrate is heated to 350°C and composition of films is close to exact stoichiometric cubic BZN.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Xi, X. X., Li, H.-C., Si, W., Sirenko, A. A., Akimov, I. A., Fox, J. R., Clark, A. M., Hao, J., J. Electroceram., 4 393 (2000)Google Scholar
2. Sengupta, L. C., Sengupta, S.: Mat. Res. Innovat. 2, 278 (1999)Google Scholar
3. Fuchs, D., Schneider, C. W., Schneider, R., Rietschel, H., J. Appl. Phys., 85 7362 (1999)Google Scholar
4. Christen, H.-M., Knauss, L. A., Harshavardhan, K. S., Material Science and Engineering, B56 200 (1998)Google Scholar
5. Ren, W., Trolier-McKinstry, S., Randall, C. A., Shrout, T. R., J. Appl. Phys., 89, 767 (2001)Google Scholar
6. Ren, W., Thayer, R., Randall, C. A., Shrout, T. R., Trolier-McKinstry, S., Mater. Res. Soc. Symp. Proc., 603, 137 (2000)Google Scholar
7. Thayer, R. L., Randall, C. A., Trolier-Mckinstry, S., J. Appl. Phys. 94, 1941 (2003)Google Scholar
8. Chen, Y. C., Cheng, H. F., Tasu, Y. M., Kuzel, P., Petzelt, J., Lin, I. N., J. Eur. Ceram. Soc., 21, 2731 (2001)Google Scholar
9. Cheng, H. F., Chen, Y. C., Lin, I. N., J. Appl. Phys., 87, 479 (2000)Google Scholar
10. Hong, Y. P., Ha, S., Lee, H. Y., Lee, Y. C., Ko, K. H., Kim, D. W., Hong, H. B., Hong, K. S., Thin Solid Films, 419, 183 (2002)Google Scholar
11. Ha, S., Lee, Y. S., Hong, Y. P., Lee, H. Y., Lee, Y. C., Ko, K. H., Kim, D. W., Hong, H. B., Hong, K. S., J. Appl. Phys., DOI:10.1007/s00339–003–2233–2 (2003)Google Scholar
12. Lu, J., Chen, Z., Taylor, T. R., Stemmer, S., J. Vac. Sci. Technol, A21(5), 1745 (2003)Google Scholar
13. Levin, I., Amos, T. G., Nino, J. C., Vanderah, T. A., Randall, C.A., Langana, M. T., J. Solid State Chem., 168, 69 (2002)Google Scholar
14. Levin, I., Amos, T. G., Nino, J. C., Vanderah, T. A., Reaney, I. M., Randall, C. A., Lanagan, M. T., J. Mater. Res., 17, 1406 (2002)Google Scholar
15. Chen, S. Y., Lee, S. Y., Lin, T. J., J. Euro. Cera. Soc., 23, 873 (2003)Google Scholar