Skip to main content Accessibility help

Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures

  • Lyuba A. Delimova (a1), I. V. Grekhov (a2), D. V. Mashovets (a3), Sangmin Shin (a4), June-Mo Koo (a5), Suk-Pil Kim (a6), Youngsoo Park (a7), V. P. Afanasjev (a8), P. V. Afanasjev (a9) and A. A. Petrov (a10)...


A method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on the recharge of interface traps induced by external bias pulse applied to the metal/ferroelectric/metal structure. It is shown that the transient current under bias pulse can be controlled by the traps recharge on the reverse-biased interface. Using the method, the trap charge density on interfaces of MOCVD Pt/PZT/Ir(Ti/SiO2/Si) and Ir/PZT/Ir(Ti/SiO2/Si) capacitors were found from transient current measurements.



Hide All
1 Evans, J.T. and Womack, R., IEEE J. Solid State Circuits SSC–23, 1171 (1988).
2 Scott, J.F., Araujo, C. A., and McMillan, L.D., Condens. Matter News 1, 16 (1992).
3 Prisedsky, V. V., Shishkovsky, V. I., and Klimov, V.V., Ferroelectrics 17, 465 (1978).
4 Robertson, J., Warren, William L., Tuttle, Bruce A., Dimos, Duane, Smyth, Donald M., Apply. Phys. Lett. 3, 1519 (1993).
5 Raymond, M. V., and Smyth, D.M., Integrated Ferroelectrics 4, 145 (1994).
6 Baude, P. F., Ye, C., and Polla, D. L., Appl. Phys. Lett. 64, 2670 (1994).
7 Mihara, T., and Watanabe, H., Jpn. J. Appl. Phys. 34, 5664 (1995).
8 Chen, H-M, Lan, J-M, Chen, J-L, and Lee, J. Y-M, Appl. Phys. Lett. 69, 1743 (1996).
9 Nishida, T., Matsuoka, M., Okamura, S., and Shiosaki, T., Jpn. J. Appl. Phys. 42, 5947 (2003).
10 Delimova, L., Liniichuk, I., Mashovets, D., Titkov, I., Grekhov, I., Proc. 10th EMF, (Cambridge UK, August, 2003) J. Conf. Abs. 8, 113.
11 Berman, L., and Titkov, I., Semiconductors 38, 683 (2004).
12 Delimova, L., Grekhov, I., Mashovets, D., Shin, S., Koo, J-M, Kim, S-P, Park, Y., Proc. of MRS2004 Fall Meeting (Boston 2004) Mater. Res. Soc. Symp. Proc. 830, p. 183188 (2004).
13 Sze, S. M., Coleman, D. J. JR, and Loya, A., Sol. St. Electron. 14, 1209 (1971).
14 Scott, J. F., Watanabe, K., Hartmann, A. J., and Lamb, R. N., Ferroelectrics, 225, 83 (1999).
15 Simmons, J. G. and Wei, L. S., Sol. St. Electron. 17, 117 (1974).
16 Ganichev, S. D., Prettl, W., and Yassievich, I. N., Physics of the Solid State, 39, 1703 (1997).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed