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Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures

  • Lyuba A. Delimova (a1), I. V. Grekhov (a2), D. V. Mashovets (a3), Sangmin Shin (a4), June-Mo Koo (a5), Suk-Pil Kim (a6), Youngsoo Park (a7), V. P. Afanasjev (a8), P. V. Afanasjev (a9) and A. A. Petrov (a10)...

Abstract

A method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on the recharge of interface traps induced by external bias pulse applied to the metal/ferroelectric/metal structure. It is shown that the transient current under bias pulse can be controlled by the traps recharge on the reverse-biased interface. Using the method, the trap charge density on interfaces of MOCVD Pt/PZT/Ir(Ti/SiO2/Si) and Ir/PZT/Ir(Ti/SiO2/Si) capacitors were found from transient current measurements.

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  • EISSN: 1946-4274
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