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Transport Properties of Compensated μc-Si:H

Published online by Cambridge University Press:  10 February 2011

N. Wyrsch ,
M. Goerlitzer ,
N. Beck ,
J. Meier  and
A. Shah
N. Wyrsch
Affiliation:
IMT, University of Neuchatel, Neuchâtel, Switzerland.
M. Goerlitzer
Affiliation:
IMT, University of Neuchatel, Neuchâtel, Switzerland.
N. Beck
Affiliation:
IMT, University of Neuchatel, Neuchâtel, Switzerland.
J. Meier
Affiliation:
IMT, University of Neuchatel, Neuchâtel, Switzerland.
A. Shah
Affiliation:
IMT, University of Neuchatel, Neuchâtel, Switzerland.
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Abstract

Electron and hole transport in completely microcrystalline silicon (μc-Si) p-i-n cells and in intrinsic or near intrinsic μc-Si layers have been investigated, for the first time, by time of flight (TOF) at temperatures between 100 and 400 K.At room temperature, both electron and hole drift mobilities were found to be between 0.2 and 1 cm2 V-ls-1. No trace of anomalous dispersive transport was observed, neither for electrons nor for holes, down to 100 K. A decrease of the drift mobility was observed when the temperature was raised from room temperature to 400 K as usually observed in crystalline semiconductors. However, these experimental values of the drift mobilities appear more puzzling than helpful for the comprehension of this “new” photovoltaic material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 801
Copyright
Copyright © Materials Research Society 1996

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References

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