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Transport Mechanisms in Focused Ion Beam Assisted Ohmic Contacts to p-Type 6H-SiC

  • Agis A. Iliadis (a1)


The current transport mechanism in non-annealed Ohmic contact metallizations on p-type 6H-SiC formed by using focused ion beam (FIB) surface-modification and direct-write metal deposition is reported, and the properties of such focused ion beam assisted non-annealed contacts are discussed. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10-4 Ω cm2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10-5 Ω cm2 range for surface-modified and pulse laser deposited TiN contacts. The current transport mechanism of these contacts was examined and found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer.



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1. Nennewitz, O., Spiess, L. and Breternitz, V., Appl. Surf. Sci. 91, 347 (1995)
2. Crofton, J., Barnes, P. A., Williams, J. R. and Edmond, J. A., Appl. Phys. Lett. 62, 384 (1993)
3. Oder, T. N., Williams, J. R., Mohney, S. E., and Crofton, J., J. Elect. Mat. 27, 12 (1998)
4. Lundberg, N., and Ostling, M., Solid State Electronics 39, 1559 (1996)
5. Zhao, J. H., Tone, K., Weiner, S. R., Caleca, M., Du, H., and Withrow, S. P., IEEE Elect. Dev. Lett. 18, 375 (1997)
6. Goesmann, F., Schmid-Fetzer, R., Mat. Sci. and Eng. B34, 224 (1995)
7. Lee, S. K., Zetterling, C. M., Danielsson, E., Ostling, M., Palmquist, J. P., Holgberg, H., and Jansson, U., Appl. Phys. Let. 77, 1478 (2000)
8. Fursin, L. G., Zhao, J. H., and Weiner, M., Electron. Lett. 37, 1092 (2001)
9. Iliadis, A.A., Andronescu, S. N., Yang, W., Vispute, R. D., Stanishevsky, A., Orloff, J. H., Sharma, R. P., Venkatesan, T., Wood, M. C., Jones, K. A., J. Elec. Mat. 26, 136 (1999)
10. Iliadis, A. A., Andronescu, S. N., Edinger, K., Orloff, J. H., Vispute, R. D., Talyansky, V., Sharma, R. P., Venkatesan, T., Wood, M. C., and Jones, K. A., Appl. Phys. Lett., 73, 3545 (1998)
11. Bplauner, P., Butt, Y., Ro, J., Thompson, C., and Melngailis, J., J. Vac. Sci. Tech. B7, 1816 (1989)
12. Sze, S. M., Physics of Semiconductor Devices, Wiley-Interscience, New York, 2nd Edition, 1981, p. 304
13. Henry, A., Hallin, C., Ivanov, I. G., Bergman, J. P., Kordina, O., and Janzen, E., SiC and Related Materials 1995 Conference, Inst. Phys. Series, 142, 381 (1995)
14. Skorupa, W., Heera, V., Pacaud, Y., and Weishart, H., Nuclear Instruments and Methods in Physics Research B, 120, 114 (1996)


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