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Transport Measurements in LPCVD Amorphous Silicon Obtained from Disilane.

Published online by Cambridge University Press:  28 February 2011

C. Manfredotti ,
G. Gervino ,
L. Montaldi ,
U. Nastasi ,
R. Murri  and
L. Schiavulli
C. Manfredotti
Affiliation:
Istituto di Fisica Superiore, C.so M. D'Azeglio 46, 10125 Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
G. Gervino
Affiliation:
Istituto di Fisica Superiore, C.so M. D'Azeglio 46, 10125 Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
L. Montaldi
Affiliation:
Istituto di Fisica Superiore, C.so M. D'Azeglio 46, 10125 Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
U. Nastasi
Affiliation:
Istituto di Fisica Superiore, C.so M. D'Azeglio 46, 10125 Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
R. Murri
Affiliation:
Dipartimento di Fisica, Via Amendola 173, 70126 Bari, Italy
L. Schiavulli
Affiliation:
Dipartimento di Fisica, Via Amendola 173, 70126 Bari, Italy
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Abstract

Measurements of high temperature conductivity on a-Si:H obtained by LPCVD from Si2H6 at temperatures between 450 and 500 °C indicate clearly a change on the activation energy from 0.9 - 1.0 eV to 0.55 - 0.6 eV around 600 °K.

The results are not strongly different from those obtained in GD a- SiH4:however, the coefficent of the energy shift of the mobility edge with temperature is greater by a factor of 2, while the average extension of the tail state distribution at T= 0 °K is roughly a factor 1.5 larger. The main discrepancy concerns the pre-exponential factor, which is one or two orders of magnitude larger, giving a product (NcukT)of the order of 1021 cm-1 s-1. By assuming a conduction mobility two orders of magnitude larger than the maesured Hall mobility one obtains a value for N which is only a factor four times larger than what currently assumed for a-Si:H.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 179
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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