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Transport and Optical Characteristics of Al-rich AlO Film and its Application to a Non-volatile Memory

  • Shunji Nakata (a1), Shingo Nagai (a2), Minoru Kumeda (a3), Takeshi Kawae (a4), Akiharu Morimoto (a5), Yoshitada Katagiri (a6) and Tatsuo Shimizu (a7)...

Abstract

We propose the new process for fabricating Al-rich Al2O3 thin film, which is used as a charge storage layer for non-volatile Al2O3 memory. Nanoscale Al-rich thin film is deposited using RF magnetron co-sputtering by setting an Al metal plate on an Al2O3 target. Al-rich Al2O3 shows a larger conduction current in I-V characteristics and larger optical absorption than stoichiometric Al2O3 due to the increased electron trap sites. The C-V characteristics of the Al-rich Al2O3 thin film show a large hysteresis window due to the charge trapping effect in the Al-rich structure.

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