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Transmission Electron Microscopy Studies of Strained Si CMOS

  • Qianghua Xie (a1), Peter Fejes (a1), Mike Kottke (a1), Xiangdong Wang (a1), Mike Canonico (a1), David Theodore (a1), Ted White (a2), Mariam Sadaka (a2), Victor Vartanian (a2), Aaron Thean (a2), Bich-Yen Nguyen (a2), Alex Barr (a3), Shawn Thomas (a4) and Ran Liu (a5)...

Abstract

In this paper, various types of defects (both threading dislocation and misfit dislocations) in strained Si (sSi) have been analyzed by transmission electron microscopy (TEM). Germanium upper-diffusion has been studied by scanning transmission electron microscopy (STEM) for strained Si on SiGe/SOI. SGOI-devices processed using an optimized thermal budget show minimal Ge diffusion and minimal process related defects. Correlation between the device performance (such as leakage current and reliability) and structural information found in TEM has been established.

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1 Arafa, M., Ismail, K., Chu, J.O., Meyerson, B.S., and Adesida, I., IEEE Electron Device Letters 17, 1 (1996); Nayak, D.K., Goto, K., Yutani, A., Murota, J., and Shiraki, Y,. IEEE Trans. Elect. Dev. 43, (1996) 1709-1.
2 Rim, K., et. al., IEDM Technical Digest, p 707 (1998).
3 Ghani, T., et. al., IEDM Technical Digest, pp. 11.6 (2003); S. Thompson et al., Proc. IEDM, 61 (2002).
4 Cheng, Z. Y. et. al, IEEE Electron Device Lett. Vol. 22, p.321 (2001).
5 Huang, L. et. al, IEEE Trans. Electron Device Vol. 49, p.1566 (2002); K Rim, et. al., IEDM Technical Digest, p.3.1.1 (2003).
6 Lee, M.L., et al, IEDM Technical Digest, p.69 (2003).
7 Wang, H.C-H. et. al., Technical Digest, p.61 (2003).
8 Lu, S., Kottke, M., Zollner, S., and Chen, W., in Characterization and Metrology for ULSI Technology: 2000 International Conference, p672 (2001).
9 Xie, Q., Liu, R., Wang, Xiang-Dong, Canonico, M., Duda, E., Lu, S., Cook, C., Volinsky, A. A., Zollner, S., Thomas, S. G., White, T., Barr, A., Sadaka, M., Nguyen, B-Y., AIP Conference Proceedings no.683 p.223–7 2003.
10 Alles, M. L., et al., Proc. 1997 IEEE International SOI Conference, p. 128 (1997)
11 Fiorenza, J.G. et al, IEEE International Reliability Physics Symposium Proceedings, p493 (2004).

Transmission Electron Microscopy Studies of Strained Si CMOS

  • Qianghua Xie (a1), Peter Fejes (a1), Mike Kottke (a1), Xiangdong Wang (a1), Mike Canonico (a1), David Theodore (a1), Ted White (a2), Mariam Sadaka (a2), Victor Vartanian (a2), Aaron Thean (a2), Bich-Yen Nguyen (a2), Alex Barr (a3), Shawn Thomas (a4) and Ran Liu (a5)...

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