Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Article
  • Cited by 3

  • Get access
    Add to cart £25.00
    Check if you have access via personal or institutional login
    Log in Register

Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors

  • J. Vanhellemont (a1), K. G. F. Janssens (a2), S. Frabboni (a3), P. Smeys (a4), R. Balboni (a5) and A. Armigliato (a5)...

Abstract

An overview is given of transmission electron microscopy techniques to address strain with nm scale spatial resolution. In particular the possibilities and limitations of (large angle) convergent beam electron diffraction ((LA)CBED) and electron diffraction contrast imaging (EDCI) techniques are discussed in detail. It will be shown by a few case studies that unique and quantitative information on local strain distributions can be obtained by the combined use of both (LA)CBED and EDCI in correlation with three dimensional finite element simulations of the strain distributions in the thinned specimen.

Copyright

COPYRIGHT: © Materials Research Society 1996

References

Hide All
1. Hu, S.M., J. Appl. Phys., 70(6), R53 (1991).
2. Steeds, J.W., in “Introduction to Analytical Electron Microscopy”, Eds. Hren, J.J., Goldstein, J.I. and Joy, D.C., p. 387, Plenum Press (New York) (1979).
3. Spence, J.C.H. and Zuo, J.M., “Electron Microdiffraction”, Plenum Press (New York and London), (1992).
4. Eaglesham, D.J., Maher, D.M., Fraser, H.L., Humphreys, C.J. and Bean, J.C., Appl.Phys.Lett., 54, 222 (1989).
5. Pike, W.T., Brown, L.M., Kubiak, R., Newstead, S.M., Powell, A.R., Parker, E.H. and Whall, T.E., J. Cryst. Growth, 111, 925 (1991).
6. Cherns, D., Touaitia, R., Preston, A.R., Rossouw, C.J. and Houghton, D.C., Phil. Mag. A, 64, 597 (1991).
7. Armigliato, A., Servidori, M., Cembali, F., Fabbri, R., Rosa, R., Corticelli, F., Govoni, D., Drigo, A.V., Mazzer, M., Romanato, F., Frabboni, S., Balboni, R., Iyer, S.S. and Guerrieri, A., Microsc.Microanal.Microstruct., 3, 363 (1992).
8. Banhart, F. and Nagel, N., Phil. Mag. A, 70, 341 (1994).
9. Duan, X.F., Cherns, D. and Steeds, J.W., Phil. Mag. A, 70, 1091 (1994).
10. Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W. and Whelan, M.J., “Electron Microscopy of Thin Crystals”, Butterworths, London (1965).
11. Head, A.K., Humble, P., Clarebrough, L.M., Morton, A.J. and Forwood, C.T., “Computed Electron Micrographs and Defect Identification”, eds. Amelinckx, S., Gevers, R. and Nihoul, J., North Holland, Amsterdam (1973).
12. Janssens, K.G.F., Vanhellemont, J., Graef, M. De and Biest, O. Van der, Ultramicroscopy, 45, 323 (1992).
13. Janssens, K., Biest, O. Van der, Vanhellemont, J., Maes, H.E., Hull, R. and Bean, J.C., Appl.Phys.Lett. 67, 1530 (1995).
14. Twesten, R.D. and Gibson, J.M., Phys.Rev. B, 50, 17628 (1994).
15. Vanhellemont, J., De Wolf, I., Jannsens, K.G.F., Frabboni, S., Balboni, R. and Armigliato, A., Applied Surface Science, 63, 119 (1993).
16. Kimoto, K., Usami, K., Sakata, H. and Tanaka, M., Jpn. J. Appl. Phys., 32, L211 (1993).
17. Thomas, G. and Goringe, M.J., Transmission Electron Microscopy of Materials, (Wiley, New York, 1979).
18. Bullough, R., Maher, D.M. and Perrin, R.C., phys.stat.sol. (b), 43, 689 (1971).
19. Scheerschmidt, K. and Gleichman, R., in “Electron Microscopy in Solid State Physics”, eds. Bethge, H. and Heydenreich, J., Elsevier, Amsterdam, 289 (1987).
20. Stadelmann, P., Ultramicroscopy, 21, 131 (1987).
21. Tanaka, M., Saito, R., Ueno, K. and Harada, Y., J. Electron Microsc., 29, 408 (1980).
22. Cherns, D. and Preston, A.R., J. of Electron Microscop. Tech., 13, 111 (1989).
23. Armigliato, A., Balboni, R. and Frabboni, S., these proceedings.
24. Anderson, R., Klepeis, S., Benedict, J., Vandygrift, W.G. and Orndorff, M., Inst.Phys.Conf.Ser., 100, 491 (1989).
25. Hull, R., Bahnck, D., Stevie, F.A., Koszi, L.A. and Chu, S.N.G., Appl.Phys.Lett., 62, 3408 (1993).
26. Hull, R., Appl.Phys.Lett., 63, 2291 (1993).
27. Vanhellemont, J., Amelinckx, S. and Claeys, C., J. Appl. Phys., 61, 2170 and 2176 (1987).
28. Rafferty, C.S., “Stress effects in silicon oxidation-simulation and experiments”, PhD Dissertation, Stanford University (1989).
29. Harker, A.H., Pinardi, K., Jain, S.C., Atkinson, A. and Bullough, R., Phil. Mag. A, 71, 871 (1995).
30. Chin, D., Ho, S.Y., Hu, S.M., Dutton, R.W. and Moll, J.L., IEEE Trans. Electron Devices, ED-30, 744 (1983).
31. Isomae, S., Yamamoto, S., Aoki, S. and Yajima, A., IEEE Electron Device Letters, EDL-7, 368 (1986).
32. Stiffler, S.R. and Cifuentes, A.O., IEEE Trans. Electron Dev. 40, 557 (1993).
33. Smeys, P.I.L., Griffin, P.B. and Saraswat, K.C., J. Appl. Phys., in press.
34. Vanhellemont, J., Janssens, K.G.F., Frabboni, S., Balboni, R. and Armigliato, A., Electrochemical Society Proceedings Volume 95–30, 174 (1995).
35. Janssens, K.G.F., Vanhellemont, J., Maes, H.E. and Biest, O. Van der, Inst.Phys.Conf.Ser., 134, 225 (1993).
36. Janssens, K.G.F., Ph.D. Thesis, University of Leuven 1996, in press.
37. Seitz, H., Seibt, M., Baumann, F.H., Ahlborn, K. and Schröter, W., phys.stat.sol. (a) 150, 625 (1995).
  • Cited by 3

  • Get access
    Add to cart £25.00
    Check if you have access via personal or institutional login
    Log in Register

Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors

  • J. Vanhellemont (a1), K. G. F. Janssens (a2), S. Frabboni (a3), P. Smeys (a4), R. Balboni (a5) and A. Armigliato (a5)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed