We study deep defects in AIN crystals in the near infrared by photoluminescence and compare the observed emissions with those in GaN. By below bandgap excitation with an Ar ion laser three no-phonon lines at 1.043 eV, 0.943 eV, and 0.797 eV were detected, which are caused by different residual transition metal contaminants. The weak emission at 1.043 eV and the intensive emission at 0.797 eV show A1N related phonon sidebands, whereas the emission at 0.943 eV has practically no phonon sideband. No hot lines could be detected for the emissions at 0.943 and 0.797 eV in temperature dependent measurements. We discuss possible identifications of the luminescence centers and the similarity between GaN and AIN in view of transition metals.