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Transition Metal Contamination of Epitaxial Silicon

  • Martin P. Scott (a1), L. Caubin (a1), D. C. Chen (a1), E. R. Weber (a1), J. Rose (a1) and T. Tucker (a1)...

Abstract

Deep level defects in p/p+ epitaxial silicon were characterized by deep level transient spectroscopy (DLTS). Two dominant deep level defects were found in all samples which have been identified with Fe and CrB pairs. A third deep level defect was found in most of the samples which has tentatively been identified with Ti. The concentrations of these traps were established in a large number of samples as a function of epitaxial growth condition and substrate oxygen level.

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Transition Metal Contamination of Epitaxial Silicon

  • Martin P. Scott (a1), L. Caubin (a1), D. C. Chen (a1), E. R. Weber (a1), J. Rose (a1) and T. Tucker (a1)...

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