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Transition Metal Contamination of Epitaxial Silicon

Published online by Cambridge University Press:  21 February 2011

Martin P. Scott ,
L. Caubin ,
D. C. Chen ,
E. R. Weber ,
J. Rose  and
T. Tucker
Martin P. Scott
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304
L. Caubin
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304
D. C. Chen
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304
E. R. Weber
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304
J. Rose
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304
T. Tucker
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304
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Abstract

Deep level defects in p/p+ epitaxial silicon were characterized by deep level transient spectroscopy (DLTS). Two dominant deep level defects were found in all samples which have been identified with Fe and CrB pairs. A third deep level defect was found in most of the samples which has tentatively been identified with Ti. The concentrations of these traps were established in a large number of samples as a function of epitaxial growth condition and substrate oxygen level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 37
Copyright
Copyright © Materials Research Society 1985

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References

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