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Transient Simulations of Amorphous Silicon Devices

Published online by Cambridge University Press:  21 February 2011

M. Hack  and
J. G. Shaw
M. Hack
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. G. Shaw
Affiliation:
Xerox Design Research Institute, Ithaca, NY 14853
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Abstract

We have developed a numerical simulation program (MANIFEST) which calculates the time-dependent behaviour of one and two dimensional amorphous silicon devices. Our model solves the complete set of transport equations for both electrons and holes and fully includes the appropriate time dependent occupation functions for the traps in the band gap of the amorphous silicon. These traps are assumed to obey Shockiey-Read-Hall kinetics. We have simulated the transient behaviour of pin and nin diodes, both in the dark and under illumination, as well as the characteristics of thin film transistors. Our initial results are in good agreement with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 315
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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