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Transient Photoresponse of Amorphous Silicon p-i-n Diodes

Published online by Cambridge University Press:  26 February 2011

P. P. Deimel ,
G. Moller  and
K. Baumeister
P. P. Deimel
Affiliation:
Messerschmitt-Bclkow-Blohm GmbH, Postfach 80 11 09, 8000 MUnchen 80, Federal Republic of Germany
G. Moller
Affiliation:
Messerschmitt-Bclkow-Blohm GmbH, Postfach 80 11 09, 8000 MUnchen 80, Federal Republic of Germany
K. Baumeister
Affiliation:
Messerschmitt-Bclkow-Blohm GmbH, Postfach 80 11 09, 8000 MUnchen 80, Federal Republic of Germany
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Abstract

Amorphous silicon p-i-n diodes were illuminated with LED-generated trains of rectangular light pulses under various duty-cycle conditions. Our results indicate that such diodes are able to handle modulation rates in excess of 10MHz over a wide range of operating temperatures. Measurements of the dark I-V characteristics show that the shot-noise in properly designed junctions can be reduced to a level comparable to c-Si photodiodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 639
Copyright
Copyright © Materials Research Society 1987

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References

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