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Transient Flat-Band Voltage Shifts Following High Voltage Stressing of Thin Oxides*

  • D. P. Wong (a1) and D. J. Dumin (a1)

Abstract

It has been shown that the transient decay of the current after removal of a high voltage stressing pulse changed from an exponential RC time constant decay to a very long decay that had a 1/t time dependence[l]. During these long transients the flat-band voltages of the capacitors changed as the traps inside the oxides discharged. The discharge of both positive and negative changes near the silicon-oxide interface have been measured using QSCV measurements. In this paper the transient shifts in the flat-band voltages due to the discharging of stress generated traps in the oxide will be described.

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**

Support, in part, by a Texas Instrument Graduate Fellowship.

*

Supported by the Semiconductor Research Corporation.

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References

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1. Maddux, J. R., MSEE Thesis, Clemson University, May 1991.
2. Liang, M.S., Yeow, Y.T., Chang, C., Hu, C., and Brodersen, R. W., IEDM Tech. Digest, 50, 1982.
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5. Dumin, D. J., Cooper, J. R., Dickerson, K. J., and Brown, G. A., Solid-State Electronics 35, 515, 1992.
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7. Oldham, T. R., Lelis, A. J., and McLean, F. B., IEEE Trans, on Nucl. Sci. NS-33, 1203, 1986.

Transient Flat-Band Voltage Shifts Following High Voltage Stressing of Thin Oxides*

  • D. P. Wong (a1) and D. J. Dumin (a1)

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