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Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

  • Ning Yu (a1), Amitabh Jain (a1) and Doug Mercer (a1)


The SIA roadmap predicts that junction depths of 500 angstroms are required for CMOS technology nodes of 0.18 μm or beyond by the year 2001. There are several ultra-shallow junction doping techniques currently under investigation. These include beamline ion implantation, plasma immersion ion implantation, and gas immersion laser doping. This study was based on beamline ion implantation of B, P, and As into single-crystal Si wafers at 0.25-2 keV to doses of (2- 10)×1014 at./cm2 with minimized beam energy contamination. Rapid thermal annealing was applied to the implanted wafers at 1000-1050 °C for 10-15 sec at ramp rates of 35- 50 °C/s in a N2 ambient. Transient enhanced diffusion was observed for all three implant species. For example, the depth of 0.25 keV B measured by SIMS increases from 250 to 520 A at a concentration level of l×1017 at./cm3 upon RTA. To minimize the TED, several schemes of defect engineering were applied prior to low energy implantation, including pre-amorphization and implantation of other species. A comparison of TED for different implantation conditions is given with the aim of process development for minimizing TED. The impact of energy contamination on ultra shallow junctions is also addressed.



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[1] Bousetta, A., van den Berg, J.A., Armour, D.G., and Zalm, P.C., Appl. Phys. Lett. 58, 1626 (1991).
[2] Collart, E.J.H., Weemers, K., Gravesteijin, D.J., van Berkum, J.G.M., J. Vac. Sci. Tech. B 16, 280 (1998).
[3] Downey, D.F., Osbum, C.M., and Marcus, S.D., “Ultrashallow junction formation by ion implant and RTA”, in Solid State Tech., p. 71 (1997).
[4] Qian, X.Y., Cheung, N.W., Lieberman, M.A., Felch, S.B., Brennan, B., and Current, M.I., Appl. Phys. Lett. 59, 348 (1991).
[5] Felch, S. B., Brunco, D.P., Lee, B.S., Ahmad, A., Prall, K., and Chapek, D.L., “Formation of deep sub-micron buried channel pMOSFET with plasma doping”, Proc. 11th Internat. Conf. on Ion Implant Tech. p. 753 (1997).
[6] Kramer, K., Talwar, S., Lewis, I.T., Davison, J.E., Williams, K.A., Benton, K.A., and Weiner, K.H., Appl. Phys. Lett. 68, 2320 (1996).
[7] Jones, K.S., Moller, K., Chen, J., Puga-Lambers, M., Freer, B., Berstein, J., and Rubin, L., J. Appl. Phys. 81, 6051 (1997).
[8] Stolk, P.A., Gossmann, H.-J., Eaglesham, D.J., Jacobson, D.C., Rafferty, C.S., Gilmer, G.H., Jaraiz, M., and Poate, J.M., J. Appl. Phys. 81, 6031 (1997) and references therein.
[9] Agarwal, A., Eaglesham, D.J., Gossmann, H.-J., Pelaz, L., Hemer, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Y., and Simonton, R., “Boron-enhanced-diffusion of boron: the limiting factorf or ultra-shallowj unctions”, in IEDM'97, p. 467 (1997).
[10] Goto, K, Matsuo, J., Tada, Y., Tanaka, T., Momiyama, Y., Sugii, T., and Yamada, I., “A high performance 50 nm pMOSFET using decaborane (B10H14) ion implantation and 2-step activation annealing process”, in IEDM'97, p. 471 (1997).
[11] Ziegler, J.F., Biersack, J.P., and Littmark, U., The Stopping and Range of Ions in Solids, (Pergamon, New York, 1985).
[12] Privitera, V., Priolo, F., Mannino, G., Campisano, S.U., Camera, A., Arena, G., and Spinella, C., Appl. Phys. Lett. 71, 1834 (1997).
[13] Wolf, S. and Tauber, R.N., Silicon processing, p. 251 (Lattice Press, Sunset Beach, CA, 1986)

Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

  • Ning Yu (a1), Amitabh Jain (a1) and Doug Mercer (a1)


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