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Transient Diffusion Effects of Sb and B In Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions

  • G. Lulli (a1), S. Solmi (a1), M. Bianconi (a1), E. Napolitani (a2) and A. Carnera (a2)...

Abstract

In this work we investigate the influence of defects injected by ions of different mass and energy on the diffusion of B and Sb markers in bulk Si. MeV (Si or As) ions induce Sb transient enhanced diffusion, whose amount increases with increasing the near-surface vacancy supersaturation generated by the knock-on recoil mechanism. The enhancement effect lasts less than 2 h at 800 °C and less than 10 min at 900 °C. At higher (1000 °C) annealing temperature it appears that the influence of extra-interstitials introduced by the implants comes into play, inducing a retardation in Sb diffusion which is larger for the higher close implant. The effect of vacancy supersaturation observed in medium-energy implanted samples is considerably weaker than the one found in high-energy implanted ones. In the case of B marker high-energy implantation induces moderate enhanced diffusion, much smaller than the one observed -after medium-energy implants.

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Transient Diffusion Effects of Sb and B In Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions

  • G. Lulli (a1), S. Solmi (a1), M. Bianconi (a1), E. Napolitani (a2) and A. Carnera (a2)...

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