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Transient Behavior of Phoioxcurrent in a-Si :H Solar Cells

Published online by Cambridge University Press:  28 February 2011

Gad Cuang
Affiliation:
Department of Physics, Shandong University, Jinan, China
Miao Qing
Affiliation:
Department of Physics, Shandong University, Jinan, China
Cao Baocheng
Affiliation:
Department of Physics, Shandong University, Jinan, China
Guo Xiaoqin
Affiliation:
Department of Physics, Shandong University, Jinan, China
Dai Guocai
Affiliation:
Department of Physics, Shandong University, Jinan, China
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Abstrct

Time-dependent photocurrent response by the monochromatic square-pulsed excitation light of different wavelenths has been studied on the PIN a-Si:H solar cells. The experiments show that the shape of the photocurrent transient is distinctly changed by varying the photon energy of the excitation light and the applied biases. Our results can be explained by the relaxation of space charge distribution in the i-layer.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Okamoto, H., Kida, H., Nonomura, S. and Hamakawa, Y., Solar cells 8, 317 (1983)Google Scholar