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Transient Annealing of Neutron-Transmutation-Doped Silicon

Published online by Cambridge University Press:  25 February 2011

C J Pollard ,
K G Barraclough  and
M S Skolnick
C J Pollard
Affiliation:
VLSI Technology Division, British Telecom Research Laboratories, Martlesham Heath, Suffolk, England
K G Barraclough
Affiliation:
VLSI Technology Division, British Telecom Research Laboratories, Martlesham Heath, Suffolk, England Royal Signals and Radar Establishment, Malvern, Worcestershire, England
M S Skolnick
Affiliation:
VLSI Technology Division, British Telecom Research Laboratories, Martlesham Heath, Suffolk, England Royal Signals and Radar Establishment, Malvern, Worcestershire, England
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Abstract

Scanning electron beam annealing has been used to study the annealing of NTD silicon in the temperature range 600-1180°C. The annealing process has been found to be very rapid above 800°C, a 30 second anneal producing highly uniform n-type material. Below this temperature, an initial drop followed by a progressive rise in sample resistivity with increasing anneal time is consistent with phosphorus dopant activation and the formation of a defect-related acceptor complex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 407
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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