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Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide

Published online by Cambridge University Press:  11 February 2011

S.-M. Koo ,
S. I. Khartsev ,
C.-M. Zetterling ,
A. M. Grishin  and
M. Östling
S.-M. Koo
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, S-164 40 Stockholm-Kista, SWEDEN
S. I. Khartsev
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, S-164 40 Stockholm-Kista, SWEDEN
C.-M. Zetterling
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, S-164 40 Stockholm-Kista, SWEDEN
A. M. Grishin
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, S-164 40 Stockholm-Kista, SWEDEN
M. Östling
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, S-164 40 Stockholm-Kista, SWEDEN
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Abstract

We report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr =14.2μC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan d ∼ 0.0007 at 12 V, 400kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∼ 9eV) barrier buffer layer between PZT (Eg ∼ 3.5eV) and SiC (Eg ∼ 3.2eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K7.6
Copyright
Copyright © Materials Research Society 2003

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References

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