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Towards Better Understanding of High Efficiency Cd-free CIGS Solar Cells Using Atomic Layer Deposited Indium Sulfide Buffer Layers

Published online by Cambridge University Press:  01 February 2011

N. Naghavi ,
S. Spiering ,
M. Powalla ,
B. Canava ,
A. Taisne ,
J.-F. Guillemoles ,
S. Taunier ,
A. Etcheberry  and
D. Lincot
N. Naghavi
Affiliation:
Laboratoire d'Electrochimie (LECA, UMR 7575 CNRS), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris, France
S. Spiering
Affiliation:
Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg, Hessbruehlstrasse 21 C, 70565 Stuttgart, Allemagne
M. Powalla
Affiliation:
Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg, Hessbruehlstrasse 21 C, 70565 Stuttgart, Allemagne
B. Canava
Affiliation:
Institut Lavoisier (IREM, UMR 8637 CNRS), Université de Versailles-Saint-Quentin, 45 av des Etats Unis, 78035 Versailles, France
A. Taisne
Affiliation:
EDF R&D, Avenue des Renardières, Ecuelles, 77818 Moret-sur-loing Cedex, France
J.-F. Guillemoles
Affiliation:
Laboratoire d'Electrochimie (LECA, UMR 7575 CNRS), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris, France
S. Taunier
Affiliation:
EDF R&D, Avenue des Renardières, Ecuelles, 77818 Moret-sur-loing Cedex, France
A. Etcheberry
Affiliation:
Institut Lavoisier (IREM, UMR 8637 CNRS), Université de Versailles-Saint-Quentin, 45 av des Etats Unis, 78035 Versailles, France
D. Lincot
Affiliation:
Laboratoire d'Electrochimie (LECA, UMR 7575 CNRS), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris, France
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Abstract

This paper presents optimization studies on the formation of cadmium free buffer layers for high efficiency copper indium diselenide (CIGS) thin film solar cells using a vapor phase route. Indium sulfide layers have been deposited on CIGS substrates by Atomic Layer Deposition (ALD) at substrate temperatures between 140 and 260 °C using indium acetylacetonate and hydrogen sulfide precursors. The parametric study of the deposition temperature shows an optimal value at about 220°C, leading to an efficiency of 16.4 % which is a technological breakthrough. The analysis of the device shows that indium sulfide layers give an improvement of the blue response of the cells as compared a standard CdS processed cell, due to a high apparent band gap (2.7-2.8 eV), higher open circuit voltages (up to 665 mV) and fill factor (78 %). This denotes high interface quality of the system. Atomic diffusion processes of sodium and copper in the buffer layer are evidenced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B9.9
Copyright
Copyright © Materials Research Society 2003

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