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Towards Alpha Radiation Detection in Aqueous Solution: VLSI Technology Development for Diamond-Silicon Hybrid Sensors

  • C. Giese (a1), G. Lewes-Malandrakis (a1), J. de Sanoit (a2), M. Pomorski (a2) and C. Nebel (a1)...

Abstract

In the presented work, we have developed VLSI technology processes for new prototype sensors based on the synthesis of boron doped nanocrystalline diamond (B-NCD) and silicon based commercial detectors. The process is based on commercial passivated implanted planar silicon (PIPS) devices of PD450 and CAM450 types (CANBERRA). A layer of B-NCD of several hundred nanometers thickness and boron concentration up to 1021 atoms/cm3 is grown on the SiOx passivation layer in an ellipsoidal plasma enhanced chemical vapor deposition (PECVD) reactor at temperatures from 520-750°C, in hydrogen atmosphere. . The diamond electrode is dry chemically structured and aluminum electrodes are realized before mounting in a three-fold housing for measurements in aqueous solution. The prototype sensors show an alpha spectroscopy resolution of 100 keV for 241Am electroprecipitated from liquid solution.

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Keywords

Towards Alpha Radiation Detection in Aqueous Solution: VLSI Technology Development for Diamond-Silicon Hybrid Sensors

  • C. Giese (a1), G. Lewes-Malandrakis (a1), J. de Sanoit (a2), M. Pomorski (a2) and C. Nebel (a1)...

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