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Topological Stability of 2-D Vanishing Grains

Published online by Cambridge University Press:  26 February 2011

V. E. Fradkov
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Materials Engineering, Troy, NY 12180
M. E. Glicksman
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Materials Engineering, Troy, NY 12180
J. Nordberg
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Materials Engineering, Troy, NY 12180
M. Palmer
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Materials Engineering, Troy, NY 12180
K. Rajan
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Materials Engineering, Troy, NY 12180
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Abstract

Grain growth in polycrystals occurs by decreasing the total number of grains as a result of the disappearance of small ones. That is why the both the kinetic and topological details of shrinking of small grains are important.

In 2-D, “uniform boundary model” assumptions imply the von Neumann-Mullins law, and all grains having less than 6 neighbors tend to shrink. The mean topological class ef vanishing grains was found experimentally to be about 4.3. This result suggests that most vanishing grains are either 4- or 5-sided, not transforming to 3-sided ones.

Shrinking of 4- and 5-sided 2-D grains was studied experimentally on transparent, pure SCN, (succinonitrile) polycrystalline films and by direct computer simulation of grain boundary capillary motion together with triple junctions. It was found that the grains which are much smaller than their neighbors are topologically stable.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

1. Neumann, J. von; Metal Interfac, (Cleveland, ASM, 1952), p. 108.Google Scholar
2. Mullins, W. W., J. Appl. Phys., 27, 900 (1956).Google Scholar
3. Smith, C., Metal Interfaces, (Cleveland, ASM, 1952), p.65.Google Scholar
4. Fradkov, V. E., Kravchenko, A. S., Shvindlerman, L. S., Scripta Met., 12, 1291 (1985).CrossRefGoogle Scholar
5. Glciksman, M.E., Selleck, M.E. and Rajan, K., in Simulation and Theory of Evolving Microstructures, edited by Anderson, M.P. and Rollett, A.D., (The Minerals, Metals, and Materials Society, Warrendale, PA 1990), pp. 7984.Google Scholar
6. Fradkov, V. E., Phil. Mag. Lett., 51,271(1988); V. E. Fradkov, D. G. Udler, R. E. Kris, 58, 277 (1988).CrossRefGoogle Scholar
7. Abbruzzese, G., Heckelmann, I. and Luicke, K., Acta Met. 40, 519 (1992).Google Scholar
8. Fradkov, V. E., Heckelman, I., Lücke, K., Computer Simulation of 4- and 5-sided Grain Shrinking in 2-D Polycrystals (in preparation).Google Scholar
9. Fradkov, V. E., Magnasco, M., Udler, D., Phil. Mag. Lett., 1992 (in print).Google Scholar
10. Frost, H. J., Thompson, C. V., Hove, C. L. and Whang, Junho, Scripta Met., 22, 65 (1988).Google Scholar
11. Brakke, K. A., Grain Growth in the Surface Evolver, Proc. Computational Crystal Growers Workshop, Selected Lectures in Math., AMS, in print.Google Scholar