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Topological Signatures of Medium Range Order in Amorphous Semiconductor Models

Published online by Cambridge University Press:  17 March 2011

M. M. J. Treacy ,
P. M. Voyles  and
J. M. Gibson
M. M. J. Treacy
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540
P. M. Voyles
Affiliation:
NEC Research Institute, Inc. 4 Independence Way, Princeton, NJ 08540 Dept. of Physics, University of Illinois, 1110 W. Green St., Urbana, IL 61801
J. M. Gibson
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 Cass Ave., Argonne, IL 6043
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Abstract

The topological local cluster (or Schläfli cluster) concept of Marians and Hobbs is used to detect topologically crystalline regions in models of disordered tetrahedral semiconductors. We present simple algorithms for detecting both Wells-type shortest circuits and O'Keeffe-type rings, which can be used to delineate alternative forms of the Schläfli cluster in models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A2.5
Copyright
Copyright © Materials Research Society 2000

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References

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