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Topography of Si(111): Clean Surface Preparation and Silicon Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

R. T. Tung ,
F. Schrey  and
D. J. Eaglesham
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
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Abstract

Line defects at the interfaces of epitaxial silicide layers grown at room temperature on Si(111) are found to correspond to steps on the original surface. This has enabled the examination, by transmission electron microscopy, of the topography of large areas of the Si surface after various treatments. Methods for removal of surface oxide and carbide are compared. Silicon molecular beam epitaxy (MBE) is shown to occur via step-flow mechanism at high temperatures, and through nucleation and growth of islands on terraces at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 321
Copyright
Copyright © Materials Research Society 1990

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References

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