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TMCTS for gate dielectric in thin film transistors

Published online by Cambridge University Press:  10 February 2011

Albert W. Wang ,
Navakanta Bhat  and
Krishna C. Saraswat
Albert W. Wang
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
Navakanta Bhat
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
Krishna C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
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Abstract

The use of the liquid source tetramethylcyclotetrasiloxane (TMCTS) for gate dielectric deposition in low-temperature polysilicon thin film transistor (TFT) processes is investigated. TMCTS was reacted with O2 in an LPCVD furnace at 580°C to form a gate dielectric. For comparison, a low temperature oxide (LTO) was deposited as a gate dielectric using SiH4−O2 LPCVD at 450°C. Capacitance and charge pumping measurements indicate fewer interface states for TMCTS gate dielectric. Both NMOS and PMOS TFTs show comparable or superior performance with TMCTS oxide. Post-deposition annealing has less effect on TMCTS gate oxides. Although TMCTS gate dielectrics appear slightly more susceptible to damage in biastemperature stress tests, TFTs with TMCTS gate oxides still retain better performance after stressing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 281
Copyright
Copyright © Materials Research Society 1997

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