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Tin E' Centers in X-Ray Irradiated Sn-Doped Silica

  • N. Chiodini (a1), F. Meinardi (a1), F. Morazzoni (a1), A. Paleari (a1), R. Scotti (a2) and G. Spinolo (a1)...

Abstract

Sn centers are point defects easily formed by X-ray irradiation of Sn-doped silica. Point defects are a tool for assessing the substitutional character of the dopant in Sn-doped SiO2 glasses with different Sn content (SnO2/SiO2 ratio from 0.01 to 10.0 % w/w) and prepared by two sol-gel methods differing in tin precursors (tin tetraterbutoxide and tin dibutyldiacetate). The former method produced transparent crack-free monolithic glasses of Sn-doped silica with maximum tin content of 0.1 % (SnO2/SiO2 % w/w). The latter method is more efficient and produced transparent glasses with a tin content of 1%.

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Tin E' Centers in X-Ray Irradiated Sn-Doped Silica

  • N. Chiodini (a1), F. Meinardi (a1), F. Morazzoni (a1), A. Paleari (a1), R. Scotti (a2) and G. Spinolo (a1)...

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