Skip to main content Accessibility help
×
Home

Time-resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaN

  • Bo Monemar (a1), P. P. Paskov (a2), J. P. Bergman (a3), T. Malinauskas (a4), K. Jarasiunas (a5), A. A. Toropov (a6), T. V. Shubina (a7) and A. Usui (a8)...

Abstract

Time-resolved photoluminescence (TRPL) spectroscopy has been performed in the temperature range 2 K to 300 K on thick (300 μm – 1 mm) nominally undoped bulk HVPE grown GaN layers. The PL spectra are dominated by the free excitons (FEs) and the two neutral donor bound excitons (DBEs) at about 3.4712 eV and 3.4721 eV at 2 K, assigned to the residual O and Si donors, respectively. The zero-phonon decay curves for both FEs and DBEs are nonexponential, with a fast initial decay and a slower tail at longer times. The initial decay time of the FE is about 130 ps at 2 K in such samples, the corresponding initial decay time for the DBEs for O and Si is close to 300 ps. The different lines corresponding to the so called two-electron transitions for the DBE show a different behaviour, with a longer decay time than the corresponding principal DBE states. The LO phonon replicas of the DBEs also have a decay time in excess of 1 ns in lightly doped samples.

Copyright

References

Hide All
1. Dean, P. J. and Herbert, D. C., in Excitons, edited by Cho, K. (Springer, Berlin, 1979), p. 55.
2. Dexter, D., in Solid State Physics, edited by Seitz, F and Turnbull, D (Academic, New York, 1958) Vol. 6, p. 353.
3. Freitas, J. A. Jr., Moore, W. J., Shanabrook, B. V., Braga, G. C. B., Lee, S. K., Park, S. S., and Han, J. Y., Phys. Rev. B 66, 233311 (2002).
4. Freitas, J. A. Jr., Moore, W. J., Shanabrook, B. V., Phys. Rev. B 69, 157301 (2004).
5. Wysmolek, A., Korona, K. P., Stepniewski, R., Baranowski, J. M., Bloniarz, J., Potemski, M., Jones, R. L., Look, D. C., Kuhl, J., Park, S. S., and Lee, S. K., Phys. Rev. B 69, 157302 (2004).
6. Eckey, L., Holst, J.-Ch., Maxim, P., Heitz, R., Hoffmann, A., Broser, I., Meyer, B. K., Wetzel, C., Mokhov, E. N., and Baranov, P. G., Appl. Phys. Lett. 68, 415 (1996).
7. Bergman, J. P., Monemar, B., Amano, H., Akasaki, I., Hiramatsu, K., Sawaki, N., and Detchprohm, T., Proc. Int. Conf on Silicon Carbide and Related Materials, Kyoto, Japan, 1995, Inst. of Phys. Conf. Ser. 142, 931 (1996).
8. Bunea, G. E., Herzog, W. D., Ünlü, M. S., Goldberg, B. B., and Molnar, R. L., Appl. Phys. Lett. 75, 838 (1999).
9. Korona, K. P., Phys. Rev. B 65, 235312 (2002).
10. Beaumont, B., Gibart, P., Vaille, M., Haffouz, S., Nataf, G., and Bouillé, A., J. Cryst. Growth 189/190, 97 (1998).
11. Neu, G., Teisseire, M., Lemasson, P., Lachrede, H., Grandjean, N., Semond, F., Beaumont, B., Grzegory, I., Porowski, S., and Triboulet, R., Physica B 302–303, 39 (2001).
12. Korona, K. P., Wysmolek, A., Stepniewski, R., Kuhl, J., Look, D. C., Lee, S. K., and Han, J. Y., J. Luminescence 112, 30 (2005).

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed